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I aim to answer these questions for thin film photovoltaics (CdTe focused)
What is the effect of the various aspects of the deposition process on the quality of the thin film materials used for device processing?
What defects lead to deleterious sub-bandgap absorption and recombination?
Why do devices made with single-crystal and polycrystal behave so differently?
Why high dopant activation is achievable in single crystal but not polycrystal -- from the ex-situ processing perspective
Why high dopant activation is achievable in single crystal but not polycrystal -- from the ex-situ processing perspective
(Open access)
This study explores the activation behavior and compensation mechanisms of arsenic-doped single-crystal CdTe thin films grown by molecular beam epitaxy — with implications for CdTe-based photovoltaics.
The most striking thing is that in single crystal % activation is so much higher than typical polycrystal materials, and we want to understand why, from every aspects possible (we have another relevant work talking about how in-situ growth and processing affect activation in the pipeline).
For the full study, see: Arsenic activation and compensation in single crystal CdTe bilayers, A. T. Mathew, H. Lott, E. Colegrove, M. R. Young, D. Kuciauskas, C. A. Wolden, M. O. Reese, Journal of Applied Physics. 137, 115702 (2025) https://doi.org/10.1063/5.0246994
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